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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD402 DESCRIPTION With TO-220C package Complement to type 2SB547 High breakdown voltage APPLICATIONS Designed for use in line-operated color TV vertical deflection of complementary symmetry circuit PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 200 Collector-base voltage Open emitter Collector-emitter voltage Open base 150 5 Emitter-base voltage Open collector Collector current 2.0 Collector current-Peak Base current Collector dissipation Junction temperature Storage temperature TC=25ae 3.0 1.5 20 150 -50~150 Emitter UNIT V V V A A A W ae ae THERMAL CHARACTERISTICS SYMBOL R|E jc CHARACTERISTICS Thermal resistance junction to case MAX 4.16 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SD402 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA 2.0 V ICBO Collector cut-off current VCB=150V; IE=0 50 |I A IEBO Emitter cut-off current VEB=4V; IC=0 50 |I A hFE DC current gain IC=0.4A ; VCE=10V 40 fT CC NDU ICO E SEM ANG INCH Transition frequency IC=0.4A ; VCE=10V Collector capacitance IE=0 ; VCB=10V;f=1.0MHz TOR 7 45 MHz pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD402 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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